quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. a gallium nitride high frequency field effect transistor (fet), the subject of this work, exploits a newly found exciton source in indium gallium nitride inxga1-xn. these quasi-particles are used as a quantum electron source for the fet channel, made of intrinsic gallium nitride (gan). the present work addresses the natural need for providing this high frequency transistor with a device model. following the same steps as those used in classical metal-oxide-semiconductor field effect transistor (mosfet) modeling, a model for the metal oxide heterojunction capacitor; core of this high frequency field effect transistor, is first developed.