hydrostatic pressure effect on the electrical conductivity of indium antimonide
abstract
the electrical conductivity of n-type insb in the
temperature range 77k - 300k has been calculated by using the
boltzmann equation with a relaxation time ansatz. the tv/o
dominant scattering mechanisms in this temperature range are the
impurity scattering and the polar scattering. the hydrostatic
pressure effects on the electrical conductivity have been studied
by considering the variations of the band structure, the carrier
concentration, the electron effective mass and the static dielectric
constant of the material. the variation of the electrical
conductivity up to 10 kbar at the temperatures t = 81 k and
t = 290 k is compared with experimental data.
collections
- retrospective theses [1604]