hall effect investigations in n-insb under pressure
abstract
low field electrical transport properties of n-insb in the
temperature range 6.4k-300k have been studied under pressures up
to 15 kbar using hall measurements. the pressure dependence of
the carrier concentration, the intrinsic gap and the extrinsic gap
have been studied. the extrinsic gap, e[subscript d], is found to increase
approximately exponentially with increasing pressure. this is
responsible for carrier freeze-out under pressure. the scattering
process at temperatures above look is dominated by a combination
of polar optical and electron-hole scattering while at temperatures
below 40k it is dominated by neutral impurity and ionized impurity
scattering.
collections
- retrospective theses [1604]