photoluminescence and raman characterization of plee and mbe grown semiconductor epilayers
abstract
photoluminescence and raman investigations of selected alloy semiconductor
epilayers are reported. correlations relating optical spectra and a number of
intrinsic and extrinsic properties of the materials studied are found. of particular
interest, preliminary measurements on a promising new quaternary system
(ingaalas/inp) are reported and mixed mode alas-like lo raman scattering
processes in this material are identified for the first time. in addition, evidence for
defect related photoluminescence associated with the energy gap region
in cdte is also reported.
collections
- retrospective theses [1604]